2008年 2月25日 更新
■ Samsung Electronics / SDR SDRAM Component
| Part Number | Features | Qty |
| K4S161622H-UC60 | 16Mb (1M×16), 166MHz, 50TSOP2 | Call |
| K4S641632K-UC60 | 64Mb (4M×16), 166MHz, 54TSOP2 | － |
| K4S641632K-UC75 | 64Mb (4M×16), 133MHz, 54TSOP2 | － |
| K4S641632N-LC60 | 64Mb (4M×16), 166MHz, 54TSOP2 | － |
| K4S641632N-LC75 | 64Mb (4M×16), 133MHz, 54TSOP2 | 24600 |
| K4S643232H-UC60 | 64Mb (2M×32), 166MHz, 86TSOP2 | 1263 |
| K4S643232H-UC60T00 | 64Mb (2M×32), 166MHz, 86TSOP2, T&R | 4000 |
| K4S280832I-UC75 | 16M×8, 133MHz, 54TSOP2 | 0 |
| K4S280832K-UC75 | 16M×8, 133MHz, 54TSOP2 | 162 |
| K4S281632I-UC75 | 8M×16, 133MHz, 54TSOP2 | 6507 |
| K4S281632K-UC75 | 8M×16, 133MHz, 54TSOP2 | 779 |
| K4S561632H-UC60 | 16M×16, 166MHz, 54TSOP2 | 462 |
| K4S561632H-UC75 | 16M×16, 133MHz, 54TSOP2 | 4156 |
| K4S561632J-UC75 | 256Mb, J-Die, 16M×16, 133MHz, 54TSOP2 | 914 |
| K4S561632N-LC75 | 256Mb, N-Die, 16M×16, 133MHz, 54TSOP2 | |
| K4S511632D-UC75 | 512Mb (32M×16), 133MHz, 54TSOP2 | 460 |
■ Samsung Electronics / DDR SDRAM Component
| Part Number | Features | Qty |
| K4H561638H-UCB3 | 16M×16, 166MHz (DDR333), 66TSOP2 | 829 |
| K4H561638H-UCCC | 16M×16, 200MHz (DDR400), 66TSOP2 | 935 |
| K4H511638C-UCB3 | 32M×16, 166MHz (DDR333) , 66TSOP2 | 4 |
| K4H511638D-UCB3 | 32M×16, 166MHz (DDR333), 66TSOP2 | 978 |
| K4H511638D-UCCC | 32M×16, 200MHz (DDR400), 66TSOP2 | 248 |
| K4H511638G-LCCC | 15360 |
■ Samsung Electronics / DDR2 SDRAM Component
| Part Number | Features | Qty |
| K4T51163QE-ZCD5 | 32M×16, 266MHz (DDR2-533), 84FBGA | 0 |
| K4T51163QE-ZCE6 | 32M×16, 333MHz (DDR2-667), 84FBGA | 0 |
| K4T51163QG-HCE6 | 100 | |
| K4T1G084QQ-HCE6 | 298 | |
| K4T1G164QQ-HCE6 | 364 |
■ Samsung Electronics / DDR3 SDRAM Component
| Part Number | Features | Qty |
| K4B1G1646G-BCH9 | 1Gb(64M X 16) G-Die, DDR3-1333, 96FBGA, RoHS | 1772 |
■ Samsung Electronics / DDR3 SDRAM Component
| Part Number | Features | Qty |
| K4B1G1646G-BCH9 | 1Gb(64M X 16) G-Die, DDR3-1333, 96FBGA, RoHS | 1772 |
■ Samsung Electronics / Mobile SDRAM / DDR SDRAM
| Part Number | Features | Qty |
| K4B1G1646G-BCH9 | 1Gb(64M X 16) G-Die, DDR3-1333, 96FBGA, RoHS | 1772 |
■ Samsung Electronics / Graphic Memory (GDDR SDRAM)
| Part Number | Features | Qty |
| K4M28163PF-RG75 | SDRAM, 8M×16, 1.8V, 133MHz, 54FBGA | 520 |
| K4M28163PH-BG75 | SDRAM, 8M×16, 1.8V, 133MHz, 54FBGA | 132 |
| K4M281633Ｈ-BN75 | 0 |
■ Samsung Electronics / Graphic Memory (GDDR SDRAM)
| Part Number | Features | Qty | Stock |
| K4D263238F-QC50T00 | 4M×32, 2.5V, 200MHz, 100TQFP, Leaded | 1600 | K |
| K4D263238G-GC2A | 4M×32, 2.5V, 350MHz, 144FBGA, Leaded | 10 | J |
| K4D263238K-UC50 | 4M×32, 2.5V, 200MHz, 100TQFP | 72 | J |
■ Samsung Electronics / Low-Power SRAM
| Part Number | Features | Product Status |
Qty | Stock |
| K6X0808C1D-BF70 | 32K×8, 4.5V-5.5V, 70ns, 28SOP, | EOL | 0 | - |
| K6X1008C2D-PF70 | 128K×8, 4.5-5.5V, 70ns, 32TSOP1 | EOL | 0 | - |
| K6X1008C2D-BF70 | 128K×8, 4.5V-5.5V, 70ns, 32SOP | EOL | 100 | J |
| K6X4008C1F-BF70 | 512K×8, 4.5V-5.5V, 70ns, 32SOP | EOL | 0 | - |
| K6X8008T2B-UF55 | 1M×8, 2.7V-3.6V, 55ns, 44TOSP2 | EOL | 160 | J |
| K6X8016C3B-UF55 | 512K×16, 4.5V-5.5V, 55ns, 44TSOP2 | EOL | 80 | J |
■ Samsung Electronics / High Speed SRAM (Async Fast SRAM)
| Part Number | Features | Qty | Stock |
| K6R1008C1D-KI10 | 128K×8, 3.3V, 10ns, 32SOJ | 20 | K |
| K6R1008V1D-UI10 | 128K×8, 3.3V, 10ns, 32TSOP2 | 860 | J |
| K6R1016V1D-UI10 | 64K×16, 5V, 10ns, 44TSOP2 | 1348 | J, K |
| K6R4008C1D-KI10 | 512K×8, 5V, 10ns, 36SOJ | 860 | K |
| K6R4008C1D-UI10 | 512K×8, 5V, 10ns, 44TSOP2 | 220 | J |
| K6R4008C1D-UI10T00 | 512K×8, 5V, 10ns, 44TSOP2, T&R | 4000 | K |
| K6R4008V1D-KI10T00 | 512K×8, 3.3V, 10ns, 36SOJ, Cut Reel | 920 | K |
| K6R4008V1D-UI10 | 512K×8, 3.3V, 10ns, 44TSOP2 | 806 | J, K |
| K6R4008V1D-UI10T00 | 512K×8, 3.3V, 10ns, 44TSOP2, T&R | 3000 | K |
| K6R4016C1D-UI10 | 256K×16, 5V, 10ns, 48TSOP2 | 88 | J |
| K6R4016C1D-KI10T00 | 2000 | K | |
| K6R4016V1D-UI10 | 256K×16, 3.3V, 10ns, 48TSOP2 | 628 | J |
| K6R4016V1D-UI10T00 | 256K×16, 3.3V, 10ns, 48TSOP2, T&R | 2000 | K |
■ Samsung Electronics / High Speed SRAM
| Part Number | Features | Qty |
| K7N161845A-QC13 | NtRAM, 1M×18, 2.5V, 7.5ns, 100TQFP, Leaded | 1030 |
| K7R321884M-FC20 | QDRⅡ, 2M×18, 1.8V, 200MHz, 165FBGA, Leaded | 14 |
| K7R641882M-EC20 | QDRⅡ, 4M×18, 1.8V, 200MHz, 165FBGA | 0 |
■ Samsung Electronics / NAND Flash Memory
| Part Number | Features | Qty |
| K9F2808U0C-PCB0 | 16M×8, 2.7V-3.6V, 48TSOP1 | 280 |
| K9F5608U0D-PCB0 | 32M×8, 2.7V-3.6V, 48TSOP1 | 558 |
| K9F1208U0C-PCB0 | 64M×8, 2.7V-3.6V, 48TSOP1 | 0 |
| K9F1G08U0A-PCB0 | 128M×8, 2.7V-3.6V, 48TSOP1 | 0 |
| K9F1G08U0B-PCB0 | 128M×8, 2.7V-3.6V, 48TSOP1 | 382 |
| K9F2G08U0A-PCB0 | 256M×8, 2.7V-3.6V, 48TSOP1 | 924 |
| K9F4G08U0A-PCB0 | 512M×8, 2.7V-3.6V, 48TSOP1 | 231 |
| K9K4G08U0M-PCB0 | 512M×8, 2.7V-3.6V, 48TSOP1 | 0 |
| K9K8G08U0M-PCB0 | 1G×8, 2.7V-3.6V, 48TSOP1 | 0 |
| K9K8G08U0A-PCB0 | 1G×8, 2.7V-3.6V, 48TSOP1 | 97 |
| K9W8G08U1M-PCB0 | 1G×8*, 2.7V-3.6V, 48TSOP1 | 131 |
| K9WAG08U1A-PCB0 | 2G×8*, 2.7V-3.6V, 48TSOP1 | 0 |
■ Samsung Electronics / NSSD (NAND Flash-Based Solid State Drive)
| Part Number | Features | Qty |
| MCAQE16G8APR-0XA | 16GB, 1.8" | 0 |
| MCBOE32G8APR-0XA | 32GB, 1.8" | 0 |
| MC8DE16G5APP-0XA | 16GB, 2.5" | 0 |
| MCAQE32G5APP-0XA | 32Gb, 2.5" | 0 |
■ Samsung Electronics / NOR Flash Memory
| Part Number | Features | Qty |
| K8D6316UBM-DI07 | 4M×16, 2.7V-3.6V, 48FBGA1 | 1160 |
| K8D6316UBM-PI07 | 4M×16, 2.7V-3.6V, 48TSOP1 | 0 |
| K8P6415UQB-PIB4 | Page Mode / Multi-Bank, 4M×16, 2.7V-3.6V, 48TSOP | 85 |
■ Samsung Electronics / Serial EEPROM
| Part Number | Features | Qty |
| S524A40X21-SC70 | Serial EEPROM (I2C), 2Kbit, 1.8V-5.5V, 8SOP | 1200 |
| S524A60X81-SCT0 | Serial EEPROM (I2C), 8Kbit, 1.8V-5.5V, 8SOP, T&R | 6000 |
■ Samsung Electronics / Sytem LSI (Application Processor, Microcontroller)
| Part Number | Features | Qty |
| S3C2410A20-YO80 | RISC Microprocessor, ARM920T, 200MHz, 272FBGA | 188 |
| S3C2410A26-YO80 | RISC Microprocessor, ARM920T, 266MHz, 272FBGA | 114 |
| S3C2440A40-YQ80 | RISC Microprocessor, ARM920T, 400MHz, 289FBGA | 296 |
| S3C2510A01-GB80 | 370 | |
| S3C2800X01-EE80 | DTV MPEG Docoder, ARM920T, 200MHz, 208LQFP | 876 |
| S3C3410X01-QA80 | RISC Microprocessor, ARM7DTMI, 40MHz, 128QFP | 120 |
| S3C44B01X01-ED80 | RISC Microprocessor, ARM7DTMI, 66MHz, 160LQFP | 1120 |
| S3C4510B01-QE80 | Network Microcontroller, ARM7DTMI, 50MHz, 208QFP | 480 |
| S3C4530A01-QE80 | Network Microcontroller, ARM7DTMI, 50MHz, 208QFP | 720 |
■ Hynix Semiconductor / SDRAM
| Part Number | Features | Qty |
| HY57V161610FTP-7-C | 1M×16, 143MHz, 50TSOP2 | 6100 |
| HY57V641620FTP-H-C | 4M×16, 133MHz, 54TSOP2 | 3640 |
| HY57V281620FTP-H-C | 8M×16, 133MHz, 54TSOP2 | 1659 |
| HY57V561620FTP-H-C | 16M×16, 133MHz, 54TSOP2 | 3900 |
| HY5V52AFP-6-C | 8M×32, 3.3V, 166MHz, 90FBGA | 20 |
■ Hynix Semiconductor / DDR SDRAM
| Part Number | Features | Qty |
| HY5DU281622FTP-5-C | 384 | |
| HY5DU281622FTP-J-C | 1920 | |
| HY5DU561622ETP-D43-C | 16M×16, 200MHz (DDR400), 66TSOP2 | 3240 |
| HY5DU121622CTP-D43-C | 32M×16, 200MHz (DDR400), 66TSOP2 | 3440 |
| HY5DU121622DTP-D43-C | 960 | |
| HY5DU561622ETP-D43-C | 16M×16, 200MHz (DDR400), 66TSOP2 | 3240 |
| HY5DU561622ETP-J-C | 960 |
■ Hynix Semiconductor / DDR2 SDRAM
■ Hynix Semiconductor / DDR3 SDRAM
■ Hynix Semiconductor / NAND Flash
| Part Number | Features | Qty |
| HY27UF081G2A-TPCB | 128M×8, 2.7V-3.6V, 48TSOP1 | 986 |
| HY27US08121A-TPCB | 64M×8, 2.7V-3.6V, 48TSOP1 | 0 |
■ Hynix Semiconductor / NAND Flash
| Part Number | Features | Product Status |
Qty | Stock |
| HY27UF081G2A-TPCB | 128M×8, 2.7V-3.6V, 48TSOP1 | MP | 986 | K |
| HY27US08121A-TPCB | 64M×8, 2.7V-3.6V, 48TSOP1 | MP | 0 | - |
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