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ボゴ・ティーエヌシー(BOGOtnc)はメモリーIC, システムLSI, TFT LCDなどの半導体・電子部品を提供する商社です。

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株式会社ボゴ・ティーエヌシー

2008年 2月25日 更新



■ Samsung Electronics / SDR SDRAM Component

Part Number Features Qty
K4S161622H-UC60 16Mb (1M×16), 166MHz, 50TSOP2 Call
K4S641632K-UC60 64Mb (4M×16), 166MHz, 54TSOP2
K4S641632K-UC75 64Mb (4M×16), 133MHz, 54TSOP2
K4S641632N-LC60 64Mb (4M×16), 166MHz, 54TSOP2
K4S641632N-LC75 64Mb (4M×16), 133MHz, 54TSOP2 24600
K4S643232H-UC60 64Mb (2M×32), 166MHz, 86TSOP2 1263
K4S643232H-UC60T00 64Mb (2M×32), 166MHz, 86TSOP2, T&R 4000
K4S280832I-UC75 16M×8, 133MHz, 54TSOP2 0
K4S280832K-UC75 16M×8, 133MHz, 54TSOP2 162
K4S281632I-UC75 8M×16, 133MHz, 54TSOP2 6507
K4S281632K-UC75 8M×16, 133MHz, 54TSOP2 779
K4S561632H-UC60 16M×16, 166MHz, 54TSOP2 462
K4S561632H-UC75 16M×16, 133MHz, 54TSOP2 4156
K4S561632J-UC75 256Mb, J-Die, 16M×16, 133MHz, 54TSOP2 914
K4S561632N-LC75 256Mb, N-Die, 16M×16, 133MHz, 54TSOP2  
K4S511632D-UC75 512Mb (32M×16), 133MHz, 54TSOP2 460

■ Samsung Electronics / DDR SDRAM Component

Part Number Features Qty
K4H561638H-UCB3 16M×16, 166MHz (DDR333), 66TSOP2 829
K4H561638H-UCCC 16M×16, 200MHz (DDR400), 66TSOP2 935
K4H511638C-UCB3 32M×16, 166MHz (DDR333) , 66TSOP2 4
K4H511638D-UCB3 32M×16, 166MHz (DDR333), 66TSOP2 978
K4H511638D-UCCC 32M×16, 200MHz (DDR400), 66TSOP2 248
K4H511638G-LCCC   15360 

■ Samsung Electronics / DDR2 SDRAM Component

Part Number Features Qty
K4T51163QE-ZCD5 32M×16, 266MHz (DDR2-533), 84FBGA 0
K4T51163QE-ZCE6 32M×16, 333MHz (DDR2-667), 84FBGA 0
K4T51163QG-HCE6 100
K4T1G084QQ-HCE6 298
K4T1G164QQ-HCE6 364

■ Samsung Electronics / DDR3 SDRAM Component

Part Number   Features  Qty
K4B1G1646G-BCH9  1Gb(64M X 16) G-Die,  DDR3-1333, 96FBGA, RoHS  1772
     
     

■ Samsung Electronics / DDR3 SDRAM Component

Part Number   Features  Qty
K4B1G1646G-BCH9  1Gb(64M X 16) G-Die,  DDR3-1333, 96FBGA, RoHS  1772
     
     

■ Samsung Electronics / Mobile SDRAM / DDR SDRAM

Part Number   Features  Qty
K4B1G1646G-BCH9  1Gb(64M X 16) G-Die,  DDR3-1333, 96FBGA, RoHS  1772
     
     

■ Samsung Electronics / Graphic Memory (GDDR SDRAM)

Part Number Features Qty
K4M28163PF-RG75 SDRAM, 8M×16, 1.8V, 133MHz, 54FBGA 520
K4M28163PH-BG75 SDRAM, 8M×16, 1.8V, 133MHz, 54FBGA 132
K4M281633H-BN75 0

■ Samsung Electronics / Graphic Memory (GDDR SDRAM)

Part Number Features Qty Stock
K4D263238F-QC50T00 4M×32, 2.5V, 200MHz, 100TQFP, Leaded 1600 K
K4D263238G-GC2A 4M×32, 2.5V, 350MHz, 144FBGA, Leaded 10 J
K4D263238K-UC50 4M×32, 2.5V, 200MHz, 100TQFP 72 J

■ Samsung Electronics / Low-Power SRAM

Part Number Features Product
Status
Qty Stock
K6X0808C1D-BF70 32K×8, 4.5V-5.5V, 70ns, 28SOP, EOL 0 -
K6X1008C2D-PF70 128K×8, 4.5-5.5V, 70ns, 32TSOP1 EOL 0 -
K6X1008C2D-BF70 128K×8, 4.5V-5.5V, 70ns, 32SOP EOL 100 J
K6X4008C1F-BF70 512K×8, 4.5V-5.5V, 70ns, 32SOP EOL 0 -
K6X8008T2B-UF55 1M×8, 2.7V-3.6V, 55ns, 44TOSP2 EOL 160 J
K6X8016C3B-UF55 512K×16, 4.5V-5.5V, 55ns, 44TSOP2 EOL 80 J

■ Samsung Electronics / High Speed SRAM (Async Fast SRAM)

Part Number Features Qty Stock
K6R1008C1D-KI10 128K×8, 3.3V, 10ns, 32SOJ 20 K
K6R1008V1D-UI10 128K×8, 3.3V, 10ns, 32TSOP2 860 J
K6R1016V1D-UI10 64K×16, 5V, 10ns, 44TSOP2 1348 J, K
K6R4008C1D-KI10 512K×8, 5V, 10ns, 36SOJ 860 K
K6R4008C1D-UI10 512K×8, 5V, 10ns, 44TSOP2 220 J
K6R4008C1D-UI10T00 512K×8, 5V, 10ns, 44TSOP2, T&R 4000 K
K6R4008V1D-KI10T00 512K×8, 3.3V, 10ns, 36SOJ, Cut Reel 920 K
K6R4008V1D-UI10 512K×8, 3.3V, 10ns, 44TSOP2 806 J, K
K6R4008V1D-UI10T00 512K×8, 3.3V, 10ns, 44TSOP2, T&R 3000 K
K6R4016C1D-UI10 256K×16, 5V, 10ns, 48TSOP2 88 J
K6R4016C1D-KI10T00 2000 K
K6R4016V1D-UI10 256K×16, 3.3V, 10ns, 48TSOP2 628 J
K6R4016V1D-UI10T00 256K×16, 3.3V, 10ns, 48TSOP2, T&R 2000 K

■ Samsung Electronics / High Speed SRAM

Part Number Features Qty
K7N161845A-QC13 NtRAM, 1M×18, 2.5V, 7.5ns, 100TQFP, Leaded 1030
K7R321884M-FC20 QDRⅡ, 2M×18, 1.8V, 200MHz, 165FBGA, Leaded 14
K7R641882M-EC20 QDRⅡ, 4M×18, 1.8V, 200MHz, 165FBGA 0

■ Samsung Electronics / NAND Flash Memory

Part Number Features Qty
K9F2808U0C-PCB0 16M×8, 2.7V-3.6V, 48TSOP1 280
K9F5608U0D-PCB0 32M×8, 2.7V-3.6V, 48TSOP1 558
K9F1208U0C-PCB0 64M×8, 2.7V-3.6V, 48TSOP1 0
K9F1G08U0A-PCB0 128M×8, 2.7V-3.6V, 48TSOP1 0
K9F1G08U0B-PCB0 128M×8, 2.7V-3.6V, 48TSOP1 382
K9F2G08U0A-PCB0 256M×8, 2.7V-3.6V, 48TSOP1 924
K9F4G08U0A-PCB0 512M×8, 2.7V-3.6V, 48TSOP1 231
K9K4G08U0M-PCB0 512M×8, 2.7V-3.6V, 48TSOP1 0
K9K8G08U0M-PCB0 1G×8, 2.7V-3.6V, 48TSOP1 0
K9K8G08U0A-PCB0 1G×8, 2.7V-3.6V, 48TSOP1 97
K9W8G08U1M-PCB0 1G×8*, 2.7V-3.6V, 48TSOP1 131
K9WAG08U1A-PCB0 2G×8*, 2.7V-3.6V, 48TSOP1 0

■ Samsung Electronics / NSSD (NAND Flash-Based Solid State Drive)

Part Number Features Qty
MCAQE16G8APR-0XA 16GB, 1.8" 0
MCBOE32G8APR-0XA 32GB, 1.8" 0
MC8DE16G5APP-0XA 16GB, 2.5" 0
MCAQE32G5APP-0XA 32Gb, 2.5" 0

■ Samsung Electronics / NOR Flash Memory

Part Number Features Qty
K8D6316UBM-DI07 4M×16, 2.7V-3.6V, 48FBGA1 1160
K8D6316UBM-PI07 4M×16, 2.7V-3.6V, 48TSOP1 0
K8P6415UQB-PIB4 Page Mode / Multi-Bank, 4M×16, 2.7V-3.6V, 48TSOP 85

■ Samsung Electronics / Serial EEPROM

Part Number Features Qty
S524A40X21-SC70 Serial EEPROM (I2C), 2Kbit, 1.8V-5.5V, 8SOP 1200
S524A60X81-SCT0 Serial EEPROM (I2C), 8Kbit, 1.8V-5.5V, 8SOP, T&R 6000

■ Samsung Electronics / Sytem LSI (Application Processor, Microcontroller)

Part Number Features Qty
S3C2410A20-YO80 RISC Microprocessor, ARM920T, 200MHz, 272FBGA 188
S3C2410A26-YO80 RISC Microprocessor, ARM920T, 266MHz, 272FBGA 114
S3C2440A40-YQ80 RISC Microprocessor, ARM920T, 400MHz, 289FBGA 296
S3C2510A01-GB80 370
S3C2800X01-EE80 DTV MPEG Docoder, ARM920T, 200MHz, 208LQFP 876
S3C3410X01-QA80 RISC Microprocessor, ARM7DTMI, 40MHz, 128QFP 120
S3C44B01X01-ED80 RISC Microprocessor, ARM7DTMI, 66MHz, 160LQFP 1120
S3C4510B01-QE80 Network Microcontroller, ARM7DTMI, 50MHz, 208QFP 480
S3C4530A01-QE80 Network Microcontroller, ARM7DTMI, 50MHz, 208QFP 720



■ Hynix Semiconductor / SDRAM

Part Number Features Qty
HY57V161610FTP-7-C 1M×16, 143MHz, 50TSOP2 6100
HY57V641620FTP-H-C 4M×16, 133MHz, 54TSOP2 3640
HY57V281620FTP-H-C 8M×16, 133MHz, 54TSOP2 1659
HY57V561620FTP-H-C 16M×16, 133MHz, 54TSOP2 3900
HY5V52AFP-6-C 8M×32, 3.3V, 166MHz, 90FBGA 20

■ Hynix Semiconductor / DDR SDRAM

Part Number Features Qty
HY5DU281622FTP-5-C 384
HY5DU281622FTP-J-C 1920
HY5DU561622ETP-D43-C 16M×16, 200MHz (DDR400), 66TSOP2 3240
HY5DU121622CTP-D43-C 32M×16, 200MHz (DDR400), 66TSOP2 3440
HY5DU121622DTP-D43-C 960
HY5DU561622ETP-D43-C 16M×16, 200MHz (DDR400), 66TSOP2 3240
HY5DU561622ETP-J-C 960

■ Hynix Semiconductor / DDR2 SDRAM

       
       
       
       

■ Hynix Semiconductor / DDR3 SDRAM

       
       
       
       

■ Hynix Semiconductor / NAND Flash

Part Number Features Qty
HY27UF081G2A-TPCB 128M×8, 2.7V-3.6V, 48TSOP1 986
HY27US08121A-TPCB 64M×8, 2.7V-3.6V, 48TSOP1 0

■ Hynix Semiconductor / NAND Flash

Part Number Features Product
Status
Qty Stock
HY27UF081G2A-TPCB 128M×8, 2.7V-3.6V, 48TSOP1 MP 986 K
HY27US08121A-TPCB 64M×8, 2.7V-3.6V, 48TSOP1 MP 0 -



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